advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 80v single drive requirement r ds(on) 90m surface mount package i d 3.5a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance junction-ambient 3 62.5 /w data and specifications subject to change without notice rohs-compliant product 1 AP9987GM 200811062 parameter rating drain-source voltage 80 gate-source voltage + 25 continuous drain current 3 , v gs @ 10v 3.5 continuous drain current 3 , v gs @ 10v 2.8 pulsed drain current 1 30 total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.016 thermal data parameter storage temperature range advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 80 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.08 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =3a - - 90 m ? ? ?
AP9987GM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 5 10 15 20 25 30 036912 v ds , drain-to-source voltage (v) i d , drain current (a) v g =3.0v t a =25 o c 10v 7.0v 5.0v 4.5v 0 5 10 15 20 25 30 036912 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c v g =3.0v 10v 7.0v 5.0v 4.5v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.3 0.8 1.3 1.8 2.3 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =3a v g =10v 60 90 120 150 180 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =1a t a =25 o c 0.3 0.6 0.9 1.2 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform AP9987GM 4 q v g 4.5v q gs q gd q g charge 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0 3 6 9 12 15 0102030 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =3a v ds =40v v ds =50v v ds =64v 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a rthja = 135 : /w t t 0.02 0 10 20 30 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e 5.80 6.15 6.50 e1 3.80 3.90 4.00 e g l 0.38 0.90 0.00 4.00 8.00 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ 0.254 typ package outline : so-8 advanced power electronics corp. e b 1 34 5 6 7 8 2 d e1 a1 a g part number 9987 g m ywwsss package code date code (ywwsss) y last digit of the year ww week sss sequence e meet rohs requirement
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